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RF3375
0
Pb-Free Product Typical Applications * Basestation Applications * Broadband, Low-Noise Gain Blocks * IF or RF Buffer Amplifiers Product Description
The RF3375 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz. The device is self-contained with 50 input and output impedances and requires only two external DC-biasing elements to operate as specified.
1.04 0.80 0.50 0.30 1.60 1.40
GENERAL PURPOSE AMPLIFIER
* Driver Stage for Power Amplifiers * Final PA for Low-Power Applications * High Reliability Applications
3.10 2.90 0.48 0.36
2 PL
4.60 4.40
2.60 2.40 Shaded lead is pin 1.
Dimensions in mm.
1.80 1.45 1.75 1.40
0.43 0.38
0.53 0.41
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS
Package Style: SOT89
Features * DC to >6000MHz Operation * Internally Matched Input and Output * 13.2dB Small Signal Gain * +28dBm Output IP3 * +16.0dBm Output P1dB
1 RF IN
GND 4 2 GND 3 RF OUT
Ordering Information
RF3375 General Purpose Amplifier RF337XPCBA-41XFully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A6 050310
4-591
RF3375
Absolute Maximum Ratings Parameter
Input RF Power Operating Ambient Temperature Storage Temperature ICC
Rating
+13 -40 to +85 -60 to +150 80
Unit
dBm C C mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
Frequency Range 3dB Bandwidth Gain
Specification Min. Typ. Max.
DC to >6000 6 13.5 13.5 13.2 13.2 13.0 12.4 4.6 <1.9:1 <2.0:1 <1.7:1 +33.9 +30.0 +18.5 +16.0 -18.0 175 139
Unit
MHz GHz dB dB dB dB
Condition
T=25 C, ICC =65mA (See Note 1.)
12.5 12.5 12.2 12.2 12.0 10.0
Noise Figure Input VSWR Output VSWR Output IP3 Output P1dB Reverse Isolation +31.0 +28.0 +17.0 +14.5
dB
dBm dBm dBm dBm dB C/W C
Thermal
ThetaJC Maximum Measured Junction Temperature at DC Bias Conditions Mean Time to Failures
Freq=500MHz Freq=1000MHz Freq=2000MHz Freq=3000MHz Freq=4000MHz Freq=6000MHz Freq=2000MHz In a 50 system, DC to 6000MHz In a 50 system, DC to 500MHz In a 50 system, 500MHz to 6000MHz Freq=1000MHz Freq=2000MHz Freq=1000MHz Freq=2000MHz Freq=2000MHz ICC =65mA, PDISS =313mW. (See Note 3.) VPIN =4.81V TCASE =+85C TCASE =+85C
1500
years
With 22 bias resistor, T=+25oC Device Operating Voltage 5.18 5.36 V At pin 8 with ICC =65mA 6.6 7.0 V At Evaluation Board Connector ICC =65mA Operating Current 65 80 mA See Note 2. Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are not optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used. Note 2: The RF3375 must be operated at or below 80mA in order to achieve the thermal performance listed above. While the RF3375 may be operated at higher bias currents, 65mA is the recommended bias to ensure the highest possible reliability and electrical performance. Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 80mA over all intended operating conditions.
Power Supply
4-592
Rev A6 050310
RF3375
Pin 1 Function RF IN Description
RF input pin. This pin is NOT internally DC blocked. A DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instability. Ground connection. RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is determined by the following equation:
Interface Schematic
2 3
GND RF OUT
RF OUT
( V SUPPLY - V DEVICE ) R = -----------------------------------------------------I CC
Care should also be taken in the resistor selection to ensure that the current into the part never exceeds 80mA over the planned operating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed. Ground connection.
RF IN
4
GND
Rev A6 050310
4-593
RF3375
Application Schematic
VCC 4 22 100 pF + 1 F
100 pF RF IN
1
2
3
100 nH RF OUT 100 pF
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1 P1-1 1 2 3 CON3 R1 22 L1 100 nH C2 100 pF C3 100 pF + C4 1 F VCC1 GND 4
VCC
J1 RF IN
50 strip
C1 100 pF
1
2
3
50 strip
J2 RF OUT
337x410, r.1
4-594
Rev A6 050310
RF3375
Evaluation Board Layout Board Size 1.195" x 1.000"
Board Thickness 0.033", Board Material FR-4
Rev A6 050310
4-595
RF3375
Gain versus Frequency Across Temperature
16.0 15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0 -40C 25C 85C
Output P1dB versus Frequency Across Temperature
22.0 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0 -40C 25C 85C
(ICC=65mA)
(ICC=65mA)
Frequency (MHz)
Output Power (dBm)
Gain (dB)
Frequency (MHz)
Output IP3 versus Frequency Across Temperature
40.0
(ICC=65mA)
7.0
Noise Figure versus Frequency Across Temperature (ICC=65mA)
35.0
6.0
30.0
5.0
Noise Figure (dB)
OIP3 (dBm)
4.0
25.0
3.0
20.0
2.0
15.0 -40C 25C 85C 10.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
1.0
-40C 25C 85C 0.0 500.0 1000.0 1500.0 2000.0 2500.0 3000.0 3500.0
0.0
Frequency (MHz)
Frequency (MHz)
Input VSWR versus Frequency Across Temperature
2.5
Output VSWR versus Frequency Across Temperature
2.5
(ICC=65mA)
(ICC=65mA)
2.0
2.0
VSWR
1.5
VSWR
1.5 -40C 25C 85C 1.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0 1.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0 7000.0
-40C 25C 85C
Frequency (MHz)
Frequency (MHz)
4-596
Rev A6 050310
RF3375
0.0
Reverse Isolation versus Frequency Across Temperature
(ICC=65mA)
Junction Temperature versus Power Dissipated
180.000
(TAMBIENT=+85C)
170.000 -5.0
-10.0
Junction Temperature (C)
-40C 25C 85C
160.000
Reverse Isolation (dB)
150.000
-15.0
140.000
130.000
-20.0
120.000
-25.0 110.000
-30.0 0.0 1000.0 2000.0 3000.0 4000.0 5000.0 6000.0
100.000 0.250 0.275 0.300 0.325 0.350 0.375 0.400
Frequency (MHz) Power Dissipation versus Device Voltage Across Temperature (TAMBIENT=+85C)
0.50 0.45 0.40 80.0 0.35 0.30 70.0
Power Dissipated (Watts)
Bias Current versus Supply Voltage Across Temperature
100.0
(At Evaluation Board Connector, RBIAS=22)
90.0
Power Dissipated (W)
ICC (mA)
0.25 0.20 0.15
60.0
50.0
40.0 0.10 0.05 0.00 4.60 4.70 4.80 4.90 5.00 5.10 5.20 30.0 -40C 25C 85C 5.7 5.9 6.1 6.3 6.5 6.7 6.9 7.1 7.3 7.5 7.7
20.0
VPIN (V) Bias Current versus Devices Voltage Across Temperature (At Pin 3 of the RF3375)
100.0 90.0 80.0 70.0
VCC (V)
ICC (mA)
60.0 50.0 40.0 30.0 20.0 10.0 4.6 4.8 5.0 5.2 5.4 5.6 5.8 -40C 25C 85C
VPIN (V)
Rev A6 050310
4-597
RF3375
4-598
Rev A6 050310

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